TY - JOUR
T1 - Property design of Bi4Ti3O12-based thin films using a site-engineered concept
AU - Funakubo, H.
AU - Watanabe, T.
AU - Kojima, T.
AU - Sakai, T.
AU - Noguchi, Y.
AU - Miyayama, M.
AU - Osada, M.
AU - Kakihana, M.
AU - Saito, K.
PY - 2003/2
Y1 - 2003/2
N2 - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.
AB - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.
KW - A3. Metal organic chemical vapor deposition phase
KW - B1. Oxide
KW - B2. Ferroelectric materials
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U2 - 10.1016/S0022-0248(02)02047-X
DO - 10.1016/S0022-0248(02)02047-X
M3 - Article
AN - SCOPUS:0037291772
SN - 0022-0248
VL - 248
SP - 180
EP - 185
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - SUPPL.
ER -