Property design of Bi4Ti3O12-based thin films using a site-engineered concept

H. Funakubo; T. Watanabe; T. Kojima; T. Sakai; Y. Noguchi; M. Miyayama; M. Osada; M. Kakihana; K. Saito

doi:10.1016/S0022-0248(02)02047-X

Property design of Bi₄Ti₃O₁₂-based thin films using a site-engineered concept

H. Funakubo^*, T. Watanabe, T. Kojima, T. Sakai, Y. Noguchi, M. Miyayama, M. Osada, M. Kakihana, K. Saito

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi₄Ti₃O₁₂ structure, a site-engineered concept, is proposed for Bi₄Ti₃O₁₂-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)₄(Ti,V)₃O₁₂ was developed. A remnant polarization (Pr) value above 16 μC/cm² at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O₃.

Original language	English
Pages (from-to)	180-185
Number of pages	6
Journal	Journal of Crystal Growth
Volume	248
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/S0022-0248(02)02047-X
Publication status	Published - 2003 Feb
Externally published	Yes

Keywords

A3. Metal organic chemical vapor deposition phase
B1. Oxide
B2. Ferroelectric materials

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1016/S0022-0248(02)02047-X

Cite this

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title = "Property design of Bi4Ti3O12-based thin films using a site-engineered concept",

abstract = "A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.",

keywords = "A3. Metal organic chemical vapor deposition phase, B1. Oxide, B2. Ferroelectric materials",

author = "H. Funakubo and T. Watanabe and T. Kojima and T. Sakai and Y. Noguchi and M. Miyayama and M. Osada and M. Kakihana and K. Saito",

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AU - Funakubo, H.

AU - Watanabe, T.

AU - Kojima, T.

AU - Sakai, T.

AU - Noguchi, Y.

AU - Miyayama, M.

AU - Osada, M.

AU - Kakihana, M.

AU - Saito, K.

PY - 2003/2

Y1 - 2003/2

N2 - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

AB - A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e. (Bi,Nd)4(Ti,V)3O12 was developed. A remnant polarization (Pr) value above 16 μC/cm2 at a process temperature of 540°C was obtained together with orientation control of the films. This Pr value is comparable to that of the widely used Pb-based ferroelectrics, such as Pb(Zr,Ti)O3.

KW - A3. Metal organic chemical vapor deposition phase

KW - B1. Oxide

KW - B2. Ferroelectric materials

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