Proposal and numerical analysis of ultra-fast optical logic devices with integrated InAs QD-SOA and ring resonators

A. Matsumoto*, K. Kuwata, K. Akahane, K. Utaka

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We analytically investigate the dynamic behaviors of the proposed optical XNOR and AND logic gate devices, with an monolithically integrated highly stacked InAs quantum dots structure SOA fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the optical logic device can operate the logic gate functions at 160Gb/s RZ signals with large eye opening, the value of which is estimated to be 90.3%, as compared to the bulk-type SOA. And we show the potential of this device for routing signal processing in ultra-fast photonic network system.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication statusPublished - 2011 Dec 1
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: 2011 May 222011 May 26

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/TerritoryGermany
CityBerlin
Period11/5/2211/5/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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