Abstract
We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8μm wide and 540μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region's width. Actually we fabricated the InGaAsP/InP MIPS with partial current injection regions, and at present preliminary transmission property with no index change was observed.
| Original language | English |
|---|---|
| Pages (from-to) | 691-694 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 1998 Dec 1 |
| Event | Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn Duration: 1998 May 11 → 1998 May 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering