Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi; Y. Kawasaki; S. Komori; K. Fukumoto; M. Inuishi; K. Tsukamoto; H. Shinyashiki; T. Shingyoji

doi:10.7567/ssdm.1992.pd2-5

Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi^*, Y. Kawasaki, S. Komori, K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki, T. Shingyoji

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

Original language	English
Pages	398-400
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.pd2-5
Publication status	Published - 1992
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1992.pd2-5

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Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H., & Shingyoji, T. (1992). Proximity gettering of heavy metals by high energy ion implantation. 398-400. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn. https://doi.org/10.7567/ssdm.1992.pd2-5

Kuroi, T, Kawasaki, Y, Komori, S, Fukumoto, K, Inuishi, M, Tsukamoto, K, Shinyashiki, H & Shingyoji, T 1992, 'Proximity gettering of heavy metals by high energy ion implantation', Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26 - 92/8/28 pp. 398-400. https://doi.org/10.7567/ssdm.1992.pd2-5

@conference{d29c7d975fb14ded99157c926157766e,

title = "Proximity gettering of heavy metals by high energy ion implantation",

abstract = "We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.",

author = "T. Kuroi and Y. Kawasaki and S. Komori and K. Fukumoto and M. Inuishi and K. Tsukamoto and H. Shinyashiki and T. Shingyoji",

year = "1992",

doi = "10.7567/ssdm.1992.pd2-5",

language = "English",

pages = "398--400",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - Proximity gettering of heavy metals by high energy ion implantation

AU - Kuroi, T.

AU - Kawasaki, Y.

AU - Komori, S.

AU - Fukumoto, K.

AU - Inuishi, M.

AU - Tsukamoto, K.

AU - Shinyashiki, H.

AU - Shingyoji, T.

PY - 1992

Y1 - 1992

N2 - We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

AB - We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

UR - http://www.scopus.com/inward/record.url?scp=0026992469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026992469&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1992.pd2-5

DO - 10.7567/ssdm.1992.pd2-5

M3 - Paper

AN - SCOPUS:0026992469

SP - 398

EP - 400

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Proximity gettering of heavy metals by high energy ion implantation

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