Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine*, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

Original languageEnglish
Pages (from-to)268-270
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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