Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani; Masato Kiuch

doi:10.1109/ULTSYM.2008.0022

Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani^*, Masato Kiuch

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

Original language	English
Article number	4803528
Pages (from-to)	90-93
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
DOIs	https://doi.org/10.1109/ULTSYM.2008.0022
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: 2008 Nov 2 → 2008 Nov 5

Keywords

(11 2̄ 0)AlN film
In-plane and out-of-plane orientation
Ion beam sputter-deposition
Shear wave excitation

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2008.0022

Cite this

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title = "Pure-shear mode BAW resonator consisting of (11{\=2}0) textured AlN films",

abstract = "In-plane and out-of-plane oriented (11 {\=2} 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 {\=2}0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11{\= }0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.",

keywords = "(11 {\=2} 0)AlN film, In-plane and out-of-plane orientation, Ion beam sputter-deposition, Shear wave excitation",

author = "Takahiko Yanagitani and Masato Kiuch",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ULTSYM.2008.0022",

language = "English",

pages = "90--93",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2008 IEEE International Ultrasonics Symposium, IUS 2008 ; Conference date: 02-11-2008 Through 05-11-2008",

}

TY - JOUR

T1 - Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

AU - Yanagitani, Takahiko

AU - Kiuch, Masato

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

AB - In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

KW - (11 2̄ 0)AlN film

KW - In-plane and out-of-plane orientation

KW - Ion beam sputter-deposition

KW - Shear wave excitation

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U2 - 10.1109/ULTSYM.2008.0022

DO - 10.1109/ULTSYM.2008.0022

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JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

M1 - 4803528

T2 - 2008 IEEE International Ultrasonics Symposium, IUS 2008

Y2 - 2 November 2008 through 5 November 2008

ER -

Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Abstract

Keywords

ASJC Scopus subject areas

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