Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani*, Masato Kiuch

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

Original languageEnglish
Article number4803528
Pages (from-to)90-93
Number of pages4
JournalProceedings - IEEE Ultrasonics Symposium
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
Duration: 2008 Nov 22008 Nov 5


  • (11 2̄ 0)AlN film
  • In-plane and out-of-plane orientation
  • Ion beam sputter-deposition
  • Shear wave excitation

ASJC Scopus subject areas

  • Acoustics and Ultrasonics


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