Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh; Bungo Shigeta; Kai Igarashi; Takashi Matsukawa; Takashi Tanii; Shigetaka Mori; Iwao Ohdomari

doi:10.1063/1.115696

Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh^*, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

Original language	English
Pages (from-to)	1552-1554
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	11
DOIs	https://doi.org/10.1063/1.115696
Publication status	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115696

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@article{84b864de7b884f2b9e602c8a4f48a994,

title = "Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation",

abstract = "Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.",

author = "Meishoku Koh and Bungo Shigeta and Kai Igarashi and Takashi Matsukawa and Takashi Tanii and Shigetaka Mori and Iwao Ohdomari",

year = "1996",

doi = "10.1063/1.115696",

language = "English",

volume = "68",

pages = "1552--1554",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

AU - Koh, Meishoku

AU - Shigeta, Bungo

AU - Igarashi, Kai

AU - Matsukawa, Takashi

AU - Tanii, Takashi

AU - Mori, Shigetaka

AU - Ohdomari, Iwao

PY - 1996

Y1 - 1996

N2 - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

AB - Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.

UR - http://www.scopus.com/inward/record.url?scp=21544443596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544443596&partnerID=8YFLogxK

U2 - 10.1063/1.115696

DO - 10.1063/1.115696

M3 - Article

AN - SCOPUS:21544443596

SN - 0003-6951

VL - 68

SP - 1552

EP - 1554

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

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