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Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation
Meishoku Koh*, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review