TY - GEN
T1 - Quantitative analysis of the effect of energetic particle bombardment during deposition on (1120) texture formation in ZnO films
AU - Takayanagi, Shinji
AU - Yanagitani, Takahiko
AU - Matsukawa, Mami
AU - Watanabe, Yoshiaki
PY - 2011/12/1
Y1 - 2011/12/1
N2 - c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.
AB - c-axis parallel-oriented (1120) ZnO films are suitable for shear mode devices. In previous studies, we pointed out that (1120) texture formation was induced by the ion bombardment during a planer RF magnetron sputtering deposition. However, quantitative information of the relationship between ion energy and amount of ion irradiation are not clear. In this study, we investigated the effects of energetic ion bombardment during sputtering deposition on (1120) texture formation. The distribution of crystalline orientation of the films on the anode plane was compared with the distribution of the amount of ion flux in the anode plane. Highly crystallized (1120) orientation appeared above the target erosion area where highly energetic O -l ions bombardment was observed under the low gas pressure condition. This information will give us how to obtain much better (1120) textured ZnO films for share mode devices.
KW - RF magnetron sputtering
KW - ion bombardment
KW - ion energy distribution
KW - piezoelectric film
KW - shear mode device
UR - http://www.scopus.com/inward/record.url?scp=84869074762&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869074762&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2011.0575
DO - 10.1109/ULTSYM.2011.0575
M3 - Conference contribution
AN - SCOPUS:84869074762
SN - 9781457712531
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 2317
EP - 2320
BT - 2011 IEEE International Ultrasonics Symposium, IUS 2011
T2 - 2011 IEEE International Ultrasonics Symposium, IUS 2011
Y2 - 18 October 2011 through 21 October 2011
ER -