Abstract
We have observed lasing in a complicated eigenmode of a quasi-stadium laser diode with an unstable resonator consisting of two curved end mirrors obeying an unstable resonator condition and two straight side-wall mirrors. The laser was fabricated by application of a reactive-ion-etching technique to a molecular beam epitaxy - grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The far-field pattern shows that the lasing mode corresponds to the complicated lowest-loss mode obtained numerically by an extended Fox - Li method.
Original language | English |
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Pages (from-to) | 408-410 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 28 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2003 Mar 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics