Radiation and polarization properties of free-exciton emission from AlN (0001) surface

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.2752727

Radiation and polarization properties of free-exciton emission from AlN (0001) surface

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Free-exciton emission from AlN (0001) surface was characterized by angle-dependent photoluminescence (PL) measurement. As the radiation direction was inclined from the surface normal (c -axis direction), the emission intensity increased. This is because the optical transition between the conduction band and the top valence band is mainly allowed for light with the electric field parallel to the c -axis direction of AlN (E∥c) and consequently the free-exciton emission is strongly polarized for E∥c. By analyzing the angle-dependent PL intensities, the polarization ratio was estimated to be 0.995. This high polarization ratio results from the large negative crystal-field splitting energy.

Original language	English
Article number	261911
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2752727
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2752727

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title = "Radiation and polarization properties of free-exciton emission from AlN (0001) surface",

abstract = "Free-exciton emission from AlN (0001) surface was characterized by angle-dependent photoluminescence (PL) measurement. As the radiation direction was inclined from the surface normal (c -axis direction), the emission intensity increased. This is because the optical transition between the conduction band and the top valence band is mainly allowed for light with the electric field parallel to the c -axis direction of AlN (E∥c) and consequently the free-exciton emission is strongly polarized for E∥c. By analyzing the angle-dependent PL intensities, the polarization ratio was estimated to be 0.995. This high polarization ratio results from the large negative crystal-field splitting energy.",

author = "Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimoto",

year = "2007",

doi = "10.1063/1.2752727",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

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TY - JOUR

T1 - Radiation and polarization properties of free-exciton emission from AlN (0001) surface

AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2007

Y1 - 2007

N2 - Free-exciton emission from AlN (0001) surface was characterized by angle-dependent photoluminescence (PL) measurement. As the radiation direction was inclined from the surface normal (c -axis direction), the emission intensity increased. This is because the optical transition between the conduction band and the top valence band is mainly allowed for light with the electric field parallel to the c -axis direction of AlN (E∥c) and consequently the free-exciton emission is strongly polarized for E∥c. By analyzing the angle-dependent PL intensities, the polarization ratio was estimated to be 0.995. This high polarization ratio results from the large negative crystal-field splitting energy.

AB - Free-exciton emission from AlN (0001) surface was characterized by angle-dependent photoluminescence (PL) measurement. As the radiation direction was inclined from the surface normal (c -axis direction), the emission intensity increased. This is because the optical transition between the conduction band and the top valence band is mainly allowed for light with the electric field parallel to the c -axis direction of AlN (E∥c) and consequently the free-exciton emission is strongly polarized for E∥c. By analyzing the angle-dependent PL intensities, the polarization ratio was estimated to be 0.995. This high polarization ratio results from the large negative crystal-field splitting energy.

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DO - 10.1063/1.2752727

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261911

ER -

Radiation and polarization properties of free-exciton emission from AlN (0001) surface

Abstract

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