TY - JOUR
T1 - Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe
AU - Koh, M.
AU - Horita, K.
AU - Shigeta, B.
AU - Matsukawa, T.
AU - Kishida, A.
AU - Tanii, T.
AU - Mori, S.
AU - Ohdomari, I.
N1 - Funding Information:
This work is partly supportebdy a Grant-in-Aid for SpeciallyP romotedR esearcht, he Ministry of EducationS, ciencea ndCulture.
PY - 1996/9
Y1 - 1996/9
N2 - Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.
AB - Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.
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U2 - 10.1016/S0169-4332(96)00172-9
DO - 10.1016/S0169-4332(96)00172-9
M3 - Article
AN - SCOPUS:18344416798
SN - 0169-4332
VL - 104-105
SP - 364
EP - 368
JO - Applied Surface Science
JF - Applied Surface Science
ER -