Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

J. Koida; S. F. Chichibu; A. Uedono; T. Sota; A. Tsukazaki; M. Kawasaki

doi:10.1063/1.1646749

Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

J. Koida, S. F. Chichibu^*, A. Uedono, T. Sota, A. Tsukazaki, M. Kawasaki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.

Original language	English
Pages (from-to)	1079-1081
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1646749
Publication status	Published - 2004 Feb 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1646749

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title = "Radiative and nonradiative excitonic transitions in nonpolar (11{\=2}0) and polar (000{\=1}) and (0001) Zno epilayers",

abstract = "The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.",

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T1 - Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

AU - Koida, J.

AU - Chichibu, S. F.

AU - Uedono, A.

AU - Sota, T.

AU - Tsukazaki, A.

AU - Kawasaki, M.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.

AB - The polarized optical reflectance and photoreflectance spectra of an out-plane nonpolar ZnO epilayer grown by laser molecular-beam epitaxy was studied. The electric field component of its excitonic photoluminescence peak was polarized perpendicular to the [0001] axis. The monoenergetic positron beam line was used to determine the parameters in the ZnO epilayers. The negligible impact of growth direction on the defect incorporation suggests a potential use of epitaxial ZnO as polarization-sensitive optoelectronic devices operating in ultraviolet spectral regions.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers

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