Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma; Shigefusa F. Chlchibu; Akira Uedono; Takayuki Sota; Pablo Cantu; Thomas M. Katona; John F. Keading; Stacia Keller; Umesh K. Mishra; Shuji Nakamura; Steven P. DenBaars

doi:10.1063/1.1644041

Radiative and nonradiative processes in strain-free Al_xGa _1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma, Shigefusa F. Chlchibu^*, Akira Uedono, Takayuki Sota, Pablo Cantu, Thomas M. Katona, John F. Keading, Stacia Keller, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

The study of both the radiative and nonradiative processes in nearly strain-free Al_xGa_1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.

Original language	English
Pages (from-to)	2495-2504
Number of pages	10
Journal	Journal of Applied Physics
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.1644041
Publication status	Published - 2004 Mar 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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Onuma, T., Chlchibu, S. F., Uedono, A., Sota, T., Cantu, P., Katona, T. M., Keading, J. F., Keller, S., Mishra, U. K., Nakamura, S., & DenBaars, S. P. (2004). Radiative and nonradiative processes in strain-free Al_xGa _1-xN films studied by time-resolved photoluminescence and positron annihilation techniques. Journal of Applied Physics, 95(5), 2495-2504. https://doi.org/10.1063/1.1644041

Onuma, T, Chlchibu, SF, Uedono, A, Sota, T, Cantu, P, Katona, TM, Keading, JF, Keller, S, Mishra, UK, Nakamura, S & DenBaars, SP 2004, 'Radiative and nonradiative processes in strain-free Al_xGa _1-xN films studied by time-resolved photoluminescence and positron annihilation techniques', Journal of Applied Physics, vol. 95, no. 5, pp. 2495-2504. https://doi.org/10.1063/1.1644041

@article{63a3b82d6f6b473d8237206b99598916,

title = "Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques",

abstract = "The study of both the radiative and nonradiative processes in nearly strain-free AlxGa1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.",

author = "Takeyoshi Onuma and Chlchibu, {Shigefusa F.} and Akira Uedono and Takayuki Sota and Pablo Cantu and Katona, {Thomas M.} and Keading, {John F.} and Stacia Keller and Mishra, {Umesh K.} and Shuji Nakamura and DenBaars, {Steven P.}",

year = "2004",

month = mar,

day = "1",

doi = "10.1063/1.1644041",

language = "English",

volume = "95",

pages = "2495--2504",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

AU - Onuma, Takeyoshi

AU - Chlchibu, Shigefusa F.

AU - Uedono, Akira

AU - Sota, Takayuki

AU - Cantu, Pablo

AU - Katona, Thomas M.

AU - Keading, John F.

AU - Keller, Stacia

AU - Mishra, Umesh K.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The study of both the radiative and nonradiative processes in nearly strain-free AlxGa1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.

AB - The study of both the radiative and nonradiative processes in nearly strain-free AlxGa1-xN alloy was presented. The investigations were conducted via the time-resolved photoluminescence (TRPL) and the positron annihilation techniques. The TRPL study found a biexponential decay at low temperature and, with the increase in the value of x, a simultaneous increase in the size of cation vacancies over that of the near-band-edge one was seen at 300 K. As the dominance of nonradiative and recombination processes in the free states came into play, with the increase in the value of x and the temperature, the TRPL signal became single exponential.

UR - http://www.scopus.com/inward/record.url?scp=12144285710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144285710&partnerID=8YFLogxK

U2 - 10.1063/1.1644041

DO - 10.1063/1.1644041

M3 - Article

AN - SCOPUS:12144285710

SN - 0021-8979

VL - 95

SP - 2495

EP - 2504

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Radiative and nonradiative processes in strain-free Al_xGa _1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

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