Radical polymer-based thin film device and its I-V characteristics

Yasunori Yonekuta; Takashi Kurata; Shigemoto Abe; Hiroyuki Nishide

Radical polymer-based thin film device and its I-V characteristics

Yasunori Yonekuta^*, Takashi Kurata, Shigemoto Abe, Hiroyuki Nishide

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

Original language	English
Title of host publication	Polymer Preprints, Japan
Pages	1694
Number of pages	1
Volume	54
Edition	1
Publication status	Published - 2005
Event	54th SPSJ Annual Meeting 2005 - Yokohama Duration: 2005 May 25 → 2005 May 27

Other

Other	54th SPSJ Annual Meeting 2005
City	Yokohama
Period	05/5/25 → 05/5/27

Keywords

I-V Characteristics
Memory Device
Radical Polymer
Redox
Thin Film

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Radical polymer-based thin film device and its I-V characteristics",

abstract = "Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.",

keywords = "I-V Characteristics, Memory Device, Radical Polymer, Redox, Thin Film",

author = "Yasunori Yonekuta and Takashi Kurata and Shigemoto Abe and Hiroyuki Nishide",

year = "2005",

language = "English",

volume = "54",

pages = "1694",

booktitle = "Polymer Preprints, Japan",

edition = "1",

note = "54th SPSJ Annual Meeting 2005 ; Conference date: 25-05-2005 Through 27-05-2005",

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TY - GEN

T1 - Radical polymer-based thin film device and its I-V characteristics

AU - Yonekuta, Yasunori

AU - Kurata, Takashi

AU - Abe, Shigemoto

AU - Nishide, Hiroyuki

PY - 2005

Y1 - 2005

N2 - Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

AB - Poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA) is rapidly and reversibly oxidized at 0.8V. The radical polymer was spin coated to form a thin film on the ITO substrate. The device with the configuration of AI / PTMA/ ITO displayed an ON and OFF state in the conductivity by superimposed voltage.

KW - I-V Characteristics

KW - Memory Device

KW - Radical Polymer

KW - Redox

KW - Thin Film

UR - http://www.scopus.com/inward/record.url?scp=33645651040&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645651040&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33645651040

VL - 54

SP - 1694

BT - Polymer Preprints, Japan

T2 - 54th SPSJ Annual Meeting 2005

Y2 - 25 May 2005 through 27 May 2005

ER -

Radical polymer-based thin film device and its I-V characteristics

Abstract

Other

Keywords

ASJC Scopus subject areas

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