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Rapid and uniform SiO2 film growth on 4 inch si wafer using 100%-O3 gas
Tetsuya Nishiguchi*, Yosuke Sato, Hidehiko Nonaka, Shingo Ichimura, Takeshi Noyori, Yoshiki Morikawa, Mitsuru Kekura, Yoshimasa Nihei
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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(Scopus)