TY - JOUR
T1 - Rapid oxidation of SiC using highly concentrated ozone and characterization of oxide films
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
AU - Kosugi, Ryoji
AU - Fukuda, Kenji
AU - Arai, Kazuo
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - The highly concentrated (almost 100 vol.%) ozone gas has been utilized to dry oxidation of SiC single crystal substrates by using a quartz furnace with local heating by a halogen heater. When the flow velocity of ozone was kept as high as 5 m·cm-1 or more, the strong oxidizing power of ozone enabled rapid oxidation of SiC at a considerably lower temperature than that for the oxidation in oxygen. The ozone oxidation also resulted in a lower interface state density in the device charactrization for the MOS structure probably because the ozone oxidation was effective in reducing carbon-related defects.
AB - The highly concentrated (almost 100 vol.%) ozone gas has been utilized to dry oxidation of SiC single crystal substrates by using a quartz furnace with local heating by a halogen heater. When the flow velocity of ozone was kept as high as 5 m·cm-1 or more, the strong oxidizing power of ozone enabled rapid oxidation of SiC at a considerably lower temperature than that for the oxidation in oxygen. The ozone oxidation also resulted in a lower interface state density in the device charactrization for the MOS structure probably because the ozone oxidation was effective in reducing carbon-related defects.
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U2 - 10.3131/jvsj2.51.221
DO - 10.3131/jvsj2.51.221
M3 - Article
AN - SCOPUS:46749150531
SN - 1882-2398
VL - 51
SP - 221
EP - 223
JO - Journal of the Vacuum Society of Japan
JF - Journal of the Vacuum Society of Japan
IS - 3
ER -