Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

Tetsuya Nishiguchi; Shigeru Saitoh; Naoto Kameda; Yoshiki Morikawa; Mitsuru Kekura; Hidehiko Nonaka; Shingo Ichimura

doi:10.1143/JJAP.46.2835

Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

Tetsuya Nishiguchi^*, Shigeru Saitoh, Naoto Kameda, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO₂) films was successfully developed. The excitation of low-pressure, highly concentrated O₃ gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( ¹D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO₂ film formed with a uniform thickness and a smooth, distinct SiO₂/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

Original language	English
Pages (from-to)	2835-2839
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.46.2835
Publication status	Published - 2007 May 8
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C. / Nishiguchi, Tetsuya; Saitoh, Shigeru; Kameda, Naoto et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 5 A, 08.05.2007, p. 2835-2839.

Research output: Contribution to journal › Article › peer-review

Nishiguchi, T, Saitoh, S, Kameda, N, Morikawa, Y, Kekura, M, Nonaka, H & Ichimura, S 2007, 'Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 46, no. 5 A, pp. 2835-2839. https://doi.org/10.1143/JJAP.46.2835

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abstract = "A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.",

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AU - Nishiguchi, Tetsuya

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AU - Kameda, Naoto

AU - Morikawa, Yoshiki

AU - Kekura, Mitsuru

AU - Nonaka, Hidehiko

AU - Ichimura, Shingo

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AB - A low-temperature, damage-free process for growing ultrathin (<6nm) silicon dioxide (SiO2) films was successfully developed. The excitation of low-pressure, highly concentrated O3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200°C. The enhanced oxidation rate was due to an increased supply of O( 1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO2 film formed with a uniform thickness and a smooth, distinct SiO2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300°C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

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Rapid oxidation of silicon using UV-light irradiation in low-pressure, highly concentrated ozone gas below 300°C

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