Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

M. Yoshihara; A. Sekiya; T. Morita; K. Ishii; S. Shimoto; S. Sakai; Y. Ohki

doi:10.1088/0022-3727/30/13/012

Rare-earth-doped SiO₂ films prepared by plasma-enhanced chemical vapour deposition

M. Yoshihara^*, A. Sekiya, T. Morita, K. Ishii, S. Shimoto, S. Sakai, Y. Ohki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Rare-earth-doped thin SiO₂ films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb³⁺-doped films, strong luminescence peaks from the ⁵D₄ level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the ⁵D₃ level appear. Under DC voltages, electroluminescence from the ⁵D₄ level was also observed.

Original language	English
Pages (from-to)	1908-1912
Number of pages	5
Journal	Journal of Physics D: Applied Physics
Volume	30
Issue number	13
DOIs	https://doi.org/10.1088/0022-3727/30/13/012
Publication status	Published - 1997 Jul 7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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abstract = "Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the 5D4 level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the 5D3 level appear. Under DC voltages, electroluminescence from the 5D4 level was also observed.",

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T1 - Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

AU - Yoshihara, M.

AU - Sekiya, A.

AU - Morita, T.

AU - Ishii, K.

AU - Shimoto, S.

AU - Sakai, S.

AU - Ohki, Y.

PY - 1997/7/7

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N2 - Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the 5D4 level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the 5D3 level appear. Under DC voltages, electroluminescence from the 5D4 level was also observed.

AB - Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the 5D4 level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900°C, luminescence peaks from the 5D3 level appear. Under DC voltages, electroluminescence from the 5D4 level was also observed.

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Rare-earth-doped SiO₂ films prepared by plasma-enhanced chemical vapour deposition

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