Read head structure for magnetic tunneling junction

K. Hayashi*, E. Fukami, K. Nagahara, M. Nakada, K. Ohashi, K. Matsuda, A. Kamijo, T. Mitsuzuka, H. Tsuge

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A tunneling magnetoresistance (TMR) head structure with CPP and suited longitudinal biasing is presented. The head element has been fabricated using the magnetic tunneling junction which resistance is low enough for read head application.

Original languageEnglish
Pages (from-to)FA-03
JournalDigests of the Intermag Conference
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event2000 IEEE International Magnetics Conference-2000 IEEE INTERMAG - Toronto, Ont, Can
Duration: 2000 Apr 92000 Apr 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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