Readout ASIC with SOI technology for X-ray CCDs

Tetsuichi Kishishita*, Toshihiro Idehara, Hirokazu Ikeda, Hiroshi Tsunemi, Yasuo Arai, Goro Sato, Tadayuki Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We developed an analog front-end application specific integrated circuit (ASIC) with a fully depleted (FD) silicon-on-insulator (SOI) technology for readout of X-ray CCDs. The ASIC contains seven readout channels, each of which is equipped with the correlated double sampling circuit followed by an amplitude-to-pulse width conversion circuit. We combined the ASIC with an X-ray CCD for performance evaluation tests. We succeeded in processing analog signals from the CCD and confirmed an X-ray imaging and photon-counting capabilities by irradiating a radioisotope 55Fe. The energy resolution is 305 eV at 5.9 keV (full-width at half maximum) and the readout noise is 53.7 μV for power consumption of 33 mW per chip. The ASIC proves that the FD-SOI process can be a practically usable option for front-end applications.

Original languageEnglish
Article number5497180
Pages (from-to)2359-2364
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number4 PART 2
Publication statusPublished - 2010 Aug


  • Analog front-end
  • ASIC
  • CCD
  • low noise
  • SOI (silicon-on-insulator)
  • VLSI
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics


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