Realization of ohmic-like contact between ferromagnet and rubrene single crystal

Yuta Kitamura, Eiji Shikoh, Kosuke Sawabe, Taishi Takenobu, Masashi Shiraishi*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro- tetracyanoquinodimethane (F 4TCNQ), molybdenum trioxide (MoO 3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F 4TCNQ and MoO 3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.

    Original languageEnglish
    Article number073501
    JournalApplied Physics Letters
    Issue number7
    Publication statusPublished - 2012 Aug 13

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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