Recent development of nitirde heterojunction bipolar transistors

Toshiki Makimoto; Kazuhide Kumakura

Recent development of nitirde heterojunction bipolar transistors

Toshiki Makimoto^*, Kazuhide Kumakura

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.

Original language	English
Pages	395-404
Number of pages	10
Publication status	Published - 2004
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Recent development of nitirde heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide.
2004. 395-404 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

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abstract = "Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.",

author = "Toshiki Makimoto and Kazuhide Kumakura",

year = "2004",

language = "English",

pages = "395--404",

note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

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AU - Makimoto, Toshiki

AU - Kumakura, Kazuhide

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AB - Nitride heterojunction bipolar transistors (HBTs) are expected for high-power and high-temperature applications. However, there were two major issues that had to be addressed for these nitride HBTs. One was low current gains, and the other was large offset voltages. Recently, to solve these two issues, we have developed extrinsic base regrowth of p-InGaN and successfully fabricated Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs had low-resistive p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high-breakdown voltage characteristics as well as high-current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable to high-power electronic devices.

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T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

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Recent development of nitirde heterojunction bipolar transistors

Abstract

Conference

ASJC Scopus subject areas

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