Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu; T. Onuma; T. Aoyama; K. Nakajima; P. Ahmet; T. Chikyow; T. Sota; S. P. DenBaars; S. Nakamura; T. Kitamura; Y. Ishida; H. Okumura

Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu^*, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The recombination dynamics of localized excitons in cubic In _xGa_1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

Original language	English
Pages (from-to)	1856-1862
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
Publication status	Published - 2003 Jul 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Chichibu, S. F., Onuma, T., Aoyama, T., Nakajima, K., Ahmet, P., Chikyow, T., Sota, T., DenBaars, S. P., Nakamura, S., Kitamura, T., Ishida, Y., & Okumura, H. (2003). Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1856-1862.

Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. / Chichibu, S. F.; Onuma, T.; Aoyama, T. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 01.07.2003, p. 1856-1862.

Research output: Contribution to journal › Article › peer-review

Chichibu, SF, Onuma, T, Aoyama, T, Nakajima, K, Ahmet, P, Chikyow, T, Sota, T, DenBaars, SP, Nakamura, S, Kitamura, T, Ishida, Y & Okumura, H 2003, 'Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1856-1862.

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abstract = "The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.",

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AU - Chichibu, S. F.

AU - Onuma, T.

AU - Aoyama, T.

AU - Nakajima, K.

AU - Ahmet, P.

AU - Chikyow, T.

AU - Sota, T.

AU - DenBaars, S. P.

AU - Nakamura, S.

AU - Kitamura, T.

AU - Ishida, Y.

AU - Okumura, H.

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AB - The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

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Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

Abstract

ASJC Scopus subject areas

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