Recombination of localized excitons in InGaN single- and multiquantum-well structures

S. Chichibu*, T. Azuhata, T. Sota, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

Original languageEnglish
Pages (from-to)653-658
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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