Reconstruction structure at Ga2Se3/GaAs epitaxial interface

D. Li*, Y. Nakamura, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A highly developed reconstruction structure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic structure of the reconstruction was derived by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure, which is described as an ordered arrangement of structural vacancies on the Ga sublattice, suggests that the reconstruction results from the valence mismatch at the Ga2Se3/GaAs interface.

Original languageEnglish
Pages (from-to)1038-1042
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1991 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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