TY - JOUR
T1 - Reconstruction structure at Ga2Se3/GaAs epitaxial interface
AU - Li, D.
AU - Nakamura, Y.
AU - Otsuka, N.
AU - Qiu, J.
AU - Kobayashi, M.
AU - Gunshor, R. L.
N1 - Funding Information:
This research was supported by Air Force Office of Scientific Research grant No. 89-0438 and Defense Advanced Research Project Agency/Office of Naval Research — University Research mi- tiative Program N0014-86-K0760.
PY - 1991/5/2
Y1 - 1991/5/2
N2 - A highly developed reconstruction structure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic structure of the reconstruction was derived by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure, which is described as an ordered arrangement of structural vacancies on the Ga sublattice, suggests that the reconstruction results from the valence mismatch at the Ga2Se3/GaAs interface.
AB - A highly developed reconstruction structure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic structure of the reconstruction was derived by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure, which is described as an ordered arrangement of structural vacancies on the Ga sublattice, suggests that the reconstruction results from the valence mismatch at the Ga2Se3/GaAs interface.
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U2 - 10.1016/0022-0248(91)91128-W
DO - 10.1016/0022-0248(91)91128-W
M3 - Article
AN - SCOPUS:0026413328
SN - 0022-0248
VL - 111
SP - 1038
EP - 1042
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -