Red luminescence in pure silica glass

Ryoichi Tohmon, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Kaya Nagasawa, Yuryo Sakurai, Yoshimasa Hama

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to y-ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: ≡Si-O). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to y-irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen (≡Si-0) which is formed when a peroxy linkage traps a i-induced electron, (≡Si-0-0-Si≡ + e → ≡Si-0- + •O-Si≡). Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.9-eV luminescence to occur.

Original languageEnglish
Pages (from-to)198-204
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1989 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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