Reduced carbon contamination in OMVPE grown GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)


Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.

Original languageEnglish
Pages (from-to)L824-L826
JournalJapanese journal of applied physics
Issue number10
Publication statusPublished - 1985 Oct
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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