Abstract
This letter describes the design methodology for reduced reconfigurable logic circuits based on double gate carbon nanotube field effect transistors (DG-CNTFETs) with ambipolar propoerty. Ambipolar Binary Decision Diagram (Am-BDD) which represents the cornerstone for automatic pass transistor logic (PTL) synthesis flows of ambipolar devices was utilized to build DG-CNTFET based n-input reconfigurable cells in the conventional approach. The proposed method can reduce the number of ambipolar devices for 2-inputs reconfigurable cells, incorporating the simple Boolean algebra in the Am-BDD compared with the conventional approach. As a result, the static 2-inputs reconfigurable circuit with 16 logic functions can be synthesized by using 8 DG-CNTFETs although the previous design method needed 12 DG-CNTFETs for the same purpose.
Original language | English |
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Pages (from-to) | 356-359 |
Number of pages | 4 |
Journal | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences |
Volume | E96-A |
Issue number | 1 |
DOIs | |
Publication status | Published - 2013 Jan |
Externally published | Yes |
Keywords
- Ambipolar device
- Binary decision diagram
- Double gate CNTFET
- Reconfigurable logic design
ASJC Scopus subject areas
- Signal Processing
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
- Applied Mathematics