Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda; Takuro Fujii; Eiichi Kuramochi; Akihiko Shinya; Masaya Notomi; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ISLC.2018.8516187

Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	103-104
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516187
Publication status	Published - 2018 Oct 30
Externally published	Yes
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 2018 Sept 16 → 2018 Sept 19

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	18/9/16 → 18/9/19

Keywords

buried heterostructure
lateral current injection
photonic crystal laser

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516187

Cite this

Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Kakitsuka, T., & Matsuo, S. (2018). Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 103-104). Article 8516187 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516187

Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. / Takeda, Koji; Fujii, Takuro; Kuramochi, Eiichi et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 103-104 8516187 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takeda, K, Fujii, T, Kuramochi, E, Shinya, A, Notomi, M, Kakitsuka, T & Matsuo, S 2018, Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516187, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 103-104, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516187

Takeda K, Fujii T, Kuramochi E, Shinya A, Notomi M, Kakitsuka T et al. Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 103-104. 8516187. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516187

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abstract = "We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.",

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AB - We have developed photonic crystal (PhC) lasers, in which extremely short active regions (420 nm∼1260 nm) are embedded with an InP PhC slab. 4-μΛ threshold currents and 1-fJ/bit operating energies were achieved with 840-nm-long and 1260-nm-long active regions consisting of 3 and 2 QWs, respectively.

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Reduction of Cavity Length in λ-Scale Embedded Active-region Photonic Crystal (LEAP) Lasers

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