Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

S. Isawa; Y. Akashi; A. Matsumoto; K. Akahane; Y. Matsushima; H. Ishikawa; K. Utaka

doi:10.1109/ICIPRM.2019.8819190

Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

S. Isawa, Y. Akashi, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B⁺ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO₂ and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

Original language	English
Title of host publication	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728100807
DOIs	https://doi.org/10.1109/ICIPRM.2019.8819190
Publication status	Published - 2019 May
Event	2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan Duration: 2019 May 19 → 2019 May 23

Publication series

Name	2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference	2019 Compound Semiconductor Week, CSW 2019
Country/Territory	Japan
City	Nara
Period	19/5/19 → 19/5/23

Keywords

intermixng
ion implantation
qauntum dot
rapid thermal annealing

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ICIPRM.2019.8819190

Cite this

Isawa, S., Akashi, Y., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2019). Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings Article 8819190 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819190

Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. / Isawa, S.; Akashi, Y.; Matsumoto, A. et al.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819190 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Isawa, S, Akashi, Y, Matsumoto, A, Akahane, K, Matsushima, Y, Ishikawa, H & Utaka, K 2019, Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819190, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/5/19. https://doi.org/10.1109/ICIPRM.2019.8819190

Isawa S, Akashi Y, Matsumoto A, Akahane K, Matsushima Y, Ishikawa H et al. Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819190. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). doi: 10.1109/ICIPRM.2019.8819190

@inproceedings{b0b0a0936fac449e92c44986f3774509,

title = "Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth",

abstract = "We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.",

keywords = "intermixng, ion implantation, qauntum dot, rapid thermal annealing",

author = "S. Isawa and Y. Akashi and A. Matsumoto and K. Akahane and Y. Matsushima and H. Ishikawa and K. Utaka",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

month = may,

doi = "10.1109/ICIPRM.2019.8819190",

language = "English",

series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

}

TY - GEN

T1 - Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

AU - Isawa, S.

AU - Akashi, Y.

AU - Matsumoto, A.

AU - Akahane, K.

AU - Matsushima, Y.

AU - Ishikawa, H.

AU - Utaka, K.

PY - 2019/5

Y1 - 2019/5

N2 - We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

AB - We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

KW - intermixng

KW - ion implantation

KW - qauntum dot

KW - rapid thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=85072966599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072966599&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2019.8819190

DO - 10.1109/ICIPRM.2019.8819190

M3 - Conference contribution

AN - SCOPUS:85072966599

T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Compound Semiconductor Week, CSW 2019

Y2 - 19 May 2019 through 23 May 2019

ER -

Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

Abstract

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Keywords

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