Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

Ryoichi Tohmon; Yasushi Shimogaichi; Shuji Munekuni; Yoshimichi Ohki; Yoshimasa Hama; Kaya Nagasawa

doi:10.1063/1.101396

Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

Ryoichi Tohmon^*, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Yoshimasa Hama, Kaya Nagasawa

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

Original language	English
Pages (from-to)	1650-1652
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	17
DOIs	https://doi.org/10.1063/1.101396
Publication status	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass",

abstract = "Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.",

author = "Ryoichi Tohmon and Yasushi Shimogaichi and Shuji Munekuni and Yoshimichi Ohki and Yoshimasa Hama and Kaya Nagasawa",

year = "1989",

doi = "10.1063/1.101396",

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journal = "Applied Physics Letters",

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T1 - Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

AU - Tohmon, Ryoichi

AU - Shimogaichi, Yasushi

AU - Munekuni, Shuji

AU - Ohki, Yoshimichi

AU - Hama, Yoshimasa

AU - Nagasawa, Kaya

PY - 1989

Y1 - 1989

N2 - Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

AB - Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

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Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

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