Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach

N. M. Nashaain; S. Falina; Y. Kitabayashi; D. Matsumura; A. A. Manaf; Z. Hassan; M. Syamsul; H. Kawarada

doi:10.1109/EDTM47692.2020.9117897

Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach

N. M. Nashaain^*, S. Falina, Y. Kitabayashi, D. Matsumura, A. A. Manaf, Z. Hassan, M. Syamsul, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a simple and time effective reliability stress measurement is done by continuous breakdown cycle method and continuous cycles of stress method under varying voltages.

Original language	English
Title of host publication	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728125381
DOIs	https://doi.org/10.1109/EDTM47692.2020.9117897
Publication status	Published - 2020 Apr
Event	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia Duration: 2020 Apr 6 → 2020 Apr 21

Publication series

Name	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Country/Territory	Malaysia
City	Penang
Period	20/4/6 → 20/4/21

Keywords

FET
diamond
reliability
voltage stress

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM47692.2020.9117897

Cite this

Nashaain, N. M., Falina, S., Kitabayashi, Y., Matsumura, D., Manaf, A. A., Hassan, Z., Syamsul, M., & Kawarada, H. (2020). Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings Article 9117897 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM47692.2020.9117897

Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach. / Nashaain, N. M.; Falina, S.; Kitabayashi, Y. et al.
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9117897 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nashaain, NM, Falina, S, Kitabayashi, Y, Matsumura, D, Manaf, AA, Hassan, Z, Syamsul, M & Kawarada, H 2020, Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach. in 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings., 9117897, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020, Penang, Malaysia, 20/4/6. https://doi.org/10.1109/EDTM47692.2020.9117897

Nashaain NM, Falina S, Kitabayashi Y, Matsumura D, Manaf AA, Hassan Z et al. Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9117897. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). doi: 10.1109/EDTM47692.2020.9117897

Nashaain, N. M. ; Falina, S. ; Kitabayashi, Y. et al. / Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach. 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

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abstract = "In this paper, a simple and time effective reliability stress measurement is done by continuous breakdown cycle method and continuous cycles of stress method under varying voltages.",

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author = "Nashaain, {N. M.} and S. Falina and Y. Kitabayashi and D. Matsumura and Manaf, {A. A.} and Z. Hassan and M. Syamsul and H. Kawarada",

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Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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