Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada; Masahiro Hori; Yukinori Ono; Keigo Taira; Akira Komatsubara; Takashi Tanii; Tetsuo Endoh; Iwao Ohdomari

doi:10.1109/IEDM.2010.5703428

Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada^*, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	26.5.1-26.5.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703428
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703428

Cite this

Shinada, T., Hori, M., Ono, Y., Taira, K., Komatsubara, A., Tanii, T., Endoh, T., & Ohdomari, I. (2010). Reliable single atom doping and discrete dopant effects on transistor performance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 26.5.1-26.5.4). Article 5703428 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703428

Reliable single atom doping and discrete dopant effects on transistor performance. / Shinada, Takahiro; Hori, Masahiro; Ono, Yukinori et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 26.5.1-26.5.4 5703428 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shinada, T, Hori, M, Ono, Y, Taira, K, Komatsubara, A, Tanii, T, Endoh, T & Ohdomari, I 2010, Reliable single atom doping and discrete dopant effects on transistor performance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703428, Technical Digest - International Electron Devices Meeting, IEDM, pp. 26.5.1-26.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703428

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abstract = "For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.",

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AU - Tanii, Takashi

AU - Endoh, Tetsuo

AU - Ohdomari, Iwao

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AB - For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

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Reliable single atom doping and discrete dopant effects on transistor performance

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