Residual ion damage in GaAs: C prepared by combined ion beam and molecular beam epitaxy

Tsutomu Iida*, Yunosuke Makita, Joachim Horn, Hans L. Hartnagel, Takayuki Shima, Shinji Kimura, Kazuyuki Shikama, Hirokazu Sanpei, Adarsh Sandhu, Naoto Kobayashi, Shin Ichiro Uekusa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Ion-induced damage in the films grown by low-energy (30-30 000 eV) ion-beam doping method was investigated using the minority-carrier lifetime and temperature-dependent Hall-effect measurements. Minority-carrier lifetime measurement using scanning tunneling microscope stimulated time-resolved luminescence (STM-L) demonstrated the presence of residual ion damage in as-grown samples at C+-ion acceleration energy EC+ = 240 and 350 eV, and annealed ones at EC+ = 5, 10 and 30 keV. For EC+= 30 eV, no ion damage was observed in as-grown condition. For EC+ ≥ 5 keV, ion damage remains even after high-temperature annealing and degrades the activation of C atoms. In the temperature-dependent Hall-effect measurements, samples with EC+ = 240 and 350 eV showed unusual characteristics in net hole carrier concentration (|NA - ND|) with decreasing temperature. For EC+ = 10 and 30 keV, |NA - ND| in lower temperature regions indicates higher values than that obtained at room temperature. It was suggested that the conduction mechanisms of these two specimens are significantly affected by impurity conduction mainly due to ion damage.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 1997 May
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces


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