Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

Enrico Prati; Michele Celebrano; Lavinia Ghirardini; Marco Finazzi; Giorgio Ferrari; Takahiro Shinada; Keinan Gi; Yuki Chiba; Ayman Abdelghafar; Maasa Yano; Takashi Tanii

doi:10.23919/SNW.2019.8782962

Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Keinan Gi, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

Original language	English
Title of host publication	2019 Silicon Nanoelectronics Workshop, SNW 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487024
DOIs	https://doi.org/10.23919/SNW.2019.8782962
Publication status	Published - 2019 Jun
Event	24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan Duration: 2019 Jun 9 → 2019 Jun 10

Publication series

Name	2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference	24th Silicon Nanoelectronics Workshop, SNW 2019
Country/Territory	Japan
City	Kyoto
Period	19/6/9 → 19/6/10

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/SNW.2019.8782962

Cite this

Prati, E., Celebrano, M., Ghirardini, L., Finazzi, M., Ferrari, G., Shinada, T., Gi, K., Chiba, Y., Abdelghafar, A., Yano, M., & Tanii, T. (2019). Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. In 2019 Silicon Nanoelectronics Workshop, SNW 2019 [8782962] (2019 Silicon Nanoelectronics Workshop, SNW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2019.8782962

Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. / Prati, Enrico; Celebrano, Michele; Ghirardini, Lavinia et al.
2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8782962 (2019 Silicon Nanoelectronics Workshop, SNW 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Prati, E, Celebrano, M, Ghirardini, L, Finazzi, M, Ferrari, G, Shinada, T, Gi, K, Chiba, Y, Abdelghafar, A, Yano, M & Tanii, T 2019, Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. in 2019 Silicon Nanoelectronics Workshop, SNW 2019., 8782962, 2019 Silicon Nanoelectronics Workshop, SNW 2019, Institute of Electrical and Electronics Engineers Inc., 24th Silicon Nanoelectronics Workshop, SNW 2019, Kyoto, Japan, 19/6/9. https://doi.org/10.23919/SNW.2019.8782962

Prati E, Celebrano M, Ghirardini L, Finazzi M, Ferrari G, Shinada T et al. Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. In 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8782962. (2019 Silicon Nanoelectronics Workshop, SNW 2019). doi: 10.23919/SNW.2019.8782962

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title = "Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature",

abstract = "We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.",

author = "Enrico Prati and Michele Celebrano and Lavinia Ghirardini and Marco Finazzi and Giorgio Ferrari and Takahiro Shinada and Keinan Gi and Yuki Chiba and Ayman Abdelghafar and Maasa Yano and Takashi Tanii",

note = "Funding Information: ACKNOWLEDGEMENT E.P. acknowledges JSPS, the Short Term Mobility Program 2015 of CNR and the Short Term Mobility Program 2016 of CNR. This work was supported by a Grant-in-Aid for Basic Research (B) (25289109) from MEXT and Young Scientists (A) (15H05413) from MEXT. Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",

year = "2019",

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doi = "10.23919/SNW.2019.8782962",

language = "English",

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AU - Prati, Enrico

AU - Celebrano, Michele

AU - Ghirardini, Lavinia

AU - Finazzi, Marco

AU - Ferrari, Giorgio

AU - Shinada, Takahiro

AU - Gi, Keinan

AU - Chiba, Yuki

AU - Abdelghafar, Ayman

AU - Yano, Maasa

AU - Tanii, Takashi

N1 - Funding Information: ACKNOWLEDGEMENT E.P. acknowledges JSPS, the Short Term Mobility Program 2015 of CNR and the Short Term Mobility Program 2016 of CNR. This work was supported by a Grant-in-Aid for Basic Research (B) (25289109) from MEXT and Young Scientists (A) (15H05413) from MEXT. Publisher Copyright: © 2019 JSAP.

PY - 2019/6

Y1 - 2019/6

N2 - We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

AB - We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

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BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019

Y2 - 9 June 2019 through 10 June 2019

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Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

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