Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET)

To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R- mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.