TY - JOUR
T1 - RF diamond transistors
T2 - Current status and future prospects
AU - Umezawa, Hitoshi
AU - Hirama, Kazuyuki
AU - Arai, Tatsuya
AU - Hata, Hideo
AU - Takayanagi, Hidenori
AU - Koshiba, Toru
AU - Yohara, Keiichiro
AU - Mejima, Soichi
AU - Satoh, Mitsuya
AU - Song, Kwang Soup
AU - Kawarada, Hiroshi
PY - 2005/11/9
Y1 - 2005/11/9
N2 - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.
AB - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.
KW - Cut-off frequency
KW - Diamond
KW - Field-effect transistors
KW - Hydrogen-terminated surface conductive layer
KW - Maximum frequency of oscillation
KW - Parasitic components
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U2 - 10.1143/JJAP.44.7789
DO - 10.1143/JJAP.44.7789
M3 - Article
AN - SCOPUS:31644435770
SN - 0021-4922
VL - 44
SP - 7789
EP - 7794
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 11
ER -