RF diamond transistors: Current status and future prospects

Hitoshi Umezawa*, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

Original languageEnglish
Pages (from-to)7789-7794
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 2005 Nov 9


  • Cut-off frequency
  • Diamond
  • Field-effect transistors
  • Hydrogen-terminated surface conductive layer
  • Maximum frequency of oscillation
  • Parasitic components

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'RF diamond transistors: Current status and future prospects'. Together they form a unique fingerprint.

Cite this