RF Equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination

Makoto Kasu*, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu Yamauch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fmax cut-off frequencies near the threshold gate voltage, and (3) a high fmaxft ratio∼3.8. We discuss these features in terms of the energy barrier between the gate metal and the two-dimensional hole channel and drift region below the gate.

Original languageEnglish
Pages (from-to)1042-1049
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE91-C
Issue number7
DOIs
Publication statusPublished - 2008 Jul
Externally publishedYes

Keywords

  • Diamond
  • Equivalent circuit
  • Field-effect transistors
  • Hydrogen-surface termination
  • RF characteristics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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