TY - GEN
T1 - RF-MEMS from DC to millimeter-wave
AU - Nishino, Tamotsu
AU - Miyazaki, Moriyasu
AU - Yoshida, Yukihisa
AU - Taguchi, Motohisa
PY - 2006
Y1 - 2006
N2 - We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS.
AB - We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS.
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M3 - Conference contribution
AN - SCOPUS:34047156483
SN - 1424400872
SN - 9781424400874
T3 - Proceedings of the Mediterranean Electrotechnical Conference - MELECON
SP - 297
EP - 300
BT - 2006 IEEE Mediterranean Electrotechnical Conference, MELECON 2006 - Circuits and Systems for Signal Processing, lnformation and Communication Technologies, and Power Sources and Systems
T2 - 2006 IEEE Mediterranean Electrotechnical Conference, MELECON 2006
Y2 - 16 May 2006 through 19 May 2006
ER -