RF performance of diamond MISFETs

Hitoshi Umezawa*, Hirotada Taniuchi, Hiroaki Ishizaka, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

Original languageEnglish
Pages (from-to)121-123
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2002 Mar


  • CaF
  • Cutoff frequency
  • Diamond
  • Gate-source capacitance
  • Hydrogen-terminated surface
  • Metal-insulator-semiconductor field-effect transistor (MISFET)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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