RF performance of diamond MISFETs

Hitoshi Umezawa; Hirotada Taniuchi; Hiroaki Ishizaka; Takuya Arima; Naoki Fujihara; Minoru Tachiki; Hiroshi Kawarada

doi:10.1109/55.988811

RF performance of diamond MISFETs

Hitoshi Umezawa^*, Hirotada Taniuchi, Hiroaki Ishizaka, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A cutoff frequency (f_T) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF₂ as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest f_max of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

Original language	English
Pages (from-to)	121-123
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/55.988811
Publication status	Published - 2002 Mar

Keywords

CaF
Cutoff frequency
Diamond
Gate-source capacitance
Hydrogen-terminated surface
Metal-insulator-semiconductor field-effect transistor (MISFET)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "RF performance of diamond MISFETs",

abstract = "A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.",

keywords = "CaF, Cutoff frequency, Diamond, Gate-source capacitance, Hydrogen-terminated surface, Metal-insulator-semiconductor field-effect transistor (MISFET)",

author = "Hitoshi Umezawa and Hirotada Taniuchi and Hiroaki Ishizaka and Takuya Arima and Naoki Fujihara and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: Manuscript received September 27, 2001. This work was supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology and by the Advanced Research Institute for Science and Engineering, Waseda University. The review of this letter was arranged by Editor S. Kawamura.",

year = "2002",

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doi = "10.1109/55.988811",

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AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Ishizaka, Hiroaki

AU - Arima, Takuya

AU - Fujihara, Naoki

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received September 27, 2001. This work was supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology and by the Advanced Research Institute for Science and Engineering, Waseda University. The review of this letter was arranged by Editor S. Kawamura.

PY - 2002/3

Y1 - 2002/3

N2 - A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

AB - A cutoff frequency (fT) of 11 GHz is realized in the hydrogen-terminated surface channel diamond metal-insulator-semiconductor field-effect transistor (MISFET) with 0.7 μm gate length. This value is five times higher than that of 2 μm gate metal-semiconductor (MES) FETs and the maximum value in diamond FETs at present. Utilizing CaF2 as an insulator in the MIS structure, the gate-source capacitance is reduced to half that of diamond MESFET because of the gate insulator capacitance being in series to the surface-channel capacitance. This FET also exhibits the highest fmax of 18 GHz and 15 dB of power gain at 2 GHz. The high-frequency equivalent circuits of diamond MISFET are deduced from the S-parameters obtained from RF measurement.

KW - CaF

KW - Cutoff frequency

KW - Diamond

KW - Gate-source capacitance

KW - Hydrogen-terminated surface

KW - Metal-insulator-semiconductor field-effect transistor (MISFET)

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RF performance of diamond MISFETs

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Keywords

ASJC Scopus subject areas

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