RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors

Hitoshi Umezawa; Takuya Arima; Naoki Fujihara; Hirotada Taniuchi; Hiroaki Ishizaka; Minoru Tachiki; Christoph Wild; Peter Koidl; Hiroshi Kawarada

doi:10.1143/JJAP.41.2611

RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors

Hitoshi Umezawa^*, Takuya Arima, Naoki Fujihara, Hirotada Taniuchi, Hiroaki Ishizaka, Minoru Tachiki, Christoph Wild, Peter Koidl, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high f_TT and f_max of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f _max/f_T ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of g_m and f_T is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.

Original language	English
Pages (from-to)	2611-2614
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.41.2611
Publication status	Published - 2002 Apr

Keywords

Hydrogen-terminated surface channel
MISFET
Polycrystalline diamond
RF performance
Self-aligned gate process

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.41.2611

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Umezawa, H., Arima, T., Fujihara, N., Taniuchi, H., Ishizaka, H., Tachiki, M., Wild, C., Koidl, P., & Kawarada, H. (2002). RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(4 B), 2611-2614. https://doi.org/10.1143/JJAP.41.2611

RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors. / Umezawa, Hitoshi; Arima, Takuya; Fujihara, Naoki et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2611-2614.

Research output: Contribution to journal › Article › peer-review

Umezawa, H, Arima, T, Fujihara, N, Taniuchi, H, Ishizaka, H, Tachiki, M, Wild, C, Koidl, P & Kawarada, H 2002, 'RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 4 B, pp. 2611-2614. https://doi.org/10.1143/JJAP.41.2611

Umezawa H, Arima T, Fujihara N, Taniuchi H, Ishizaka H, Tachiki M et al. RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 Apr;41(4 B):2611-2614. doi: 10.1143/JJAP.41.2611

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title = "RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors",

abstract = "The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high fTT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f max/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.",

keywords = "Hydrogen-terminated surface channel, MISFET, Polycrystalline diamond, RF performance, Self-aligned gate process",

author = "Hitoshi Umezawa and Takuya Arima and Naoki Fujihara and Hirotada Taniuchi and Hiroaki Ishizaka and Minoru Tachiki and Christoph Wild and Peter Koidl and Hiroshi Kawarada",

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AU - Fujihara, Naoki

AU - Taniuchi, Hirotada

AU - Ishizaka, Hiroaki

AU - Tachiki, Minoru

AU - Wild, Christoph

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N2 - The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high fTT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f max/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.

AB - The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high fTT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f max/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.

KW - Hydrogen-terminated surface channel

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KW - Polycrystalline diamond

KW - RF performance

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RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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