Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata; Shintaro Sato; Tatsuhiro Nozue; Takashi Hyakushima; Masaaki Norimatsu; Miho Mishima; Tomo Murakami; Daiyu Kondo; Koji Asano; Mari Ohfuti; Hiroshi Kawarada; Tadashi Sakai; Mizuhisa Nihei; Yuji Awano

doi:10.1109/IITC.2008.4546977

Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata^*, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

47 Citations (Scopus)

Abstract

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 ⁶ A/cm² at 105°C for 100 hours without any deterioration in its properties.

Original language	English
Title of host publication	2008 IEEE International Interconnect Technology Conference, IITC
Pages	237-239
Number of pages	3
DOIs	https://doi.org/10.1109/IITC.2008.4546977
Publication status	Published - 2008 Sept 9
Event	2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States Duration: 2008 Jun 1 → 2008 Jun 4

Publication series

Name	2008 IEEE International Interconnect Technology Conference, IITC

Conference

Conference	2008 IEEE International Interconnect Technology Conference, IITC
Country/Territory	United States
City	Burlingame, CA
Period	08/6/1 → 08/6/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IITC.2008.4546977

Cite this

Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., Murakami, T., Kondo, D., Asano, K., Ohfuti, M., Kawarada, H., Sakai, T., Nihei, M., & Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). Article 4546977 (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546977

Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. / Kawabata, Akio; Sato, Shintaro; Nozue, Tatsuhiro et al.
2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239 4546977 (2008 IEEE International Interconnect Technology Conference, IITC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawabata, A, Sato, S, Nozue, T, Hyakushima, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Asano, K, Ohfuti, M, Kawarada, H, Sakai, T, Nihei, M & Awano, Y 2008, Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. in 2008 IEEE International Interconnect Technology Conference, IITC., 4546977, 2008 IEEE International Interconnect Technology Conference, IITC, pp. 237-239, 2008 IEEE International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 08/6/1. https://doi.org/10.1109/IITC.2008.4546977

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author = "Akio Kawabata and Shintaro Sato and Tatsuhiro Nozue and Takashi Hyakushima and Masaaki Norimatsu and Miho Mishima and Tomo Murakami and Daiyu Kondo and Koji Asano and Mari Ohfuti and Hiroshi Kawarada and Tadashi Sakai and Mizuhisa Nihei and Yuji Awano",

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AU - Mishima, Miho

AU - Murakami, Tomo

AU - Kondo, Daiyu

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AU - Ohfuti, Mari

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AB - We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

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Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

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