Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer

Kai Takeuchi, Fengwen Mu, Yoshiie Matsumoto, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a new room temperature bonding methodology of glass using aluminum oxide (AlO) intermediate layer. Conventional glass to glass direct bonding approaches such as anodic bonding and surface activated bonding (SAB) using silicon intermediate layer have several drawbacks such as high process temperature and a deterioration of the optical property of glass induced by the intermediate layer. In this work, based on the SAB method, quartz wafers are bonded via AlO layer formed by ion beam sputtering is proposed. The bonded quartz wafers have the bond strength of 1.8 J/m and a transparent interface.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/TerritoryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer'. Together they form a unique fingerprint.

Cite this