TY - GEN
T1 - Room Temperature Bonding of Quartz Glass using Aluminum Oxide Intermediate Layer
AU - Takeuchi, Kai
AU - Mu, Fengwen
AU - Matsumoto, Yoshiie
AU - Suga, Tadatomo
PY - 2019/5
Y1 - 2019/5
N2 - This paper presents a new room temperature bonding methodology of glass using aluminum oxide (AlO) intermediate layer. Conventional glass to glass direct bonding approaches such as anodic bonding and surface activated bonding (SAB) using silicon intermediate layer have several drawbacks such as high process temperature and a deterioration of the optical property of glass induced by the intermediate layer. In this work, based on the SAB method, quartz wafers are bonded via AlO layer formed by ion beam sputtering is proposed. The bonded quartz wafers have the bond strength of 1.8 J/m and a transparent interface.
AB - This paper presents a new room temperature bonding methodology of glass using aluminum oxide (AlO) intermediate layer. Conventional glass to glass direct bonding approaches such as anodic bonding and surface activated bonding (SAB) using silicon intermediate layer have several drawbacks such as high process temperature and a deterioration of the optical property of glass induced by the intermediate layer. In this work, based on the SAB method, quartz wafers are bonded via AlO layer formed by ion beam sputtering is proposed. The bonded quartz wafers have the bond strength of 1.8 J/m and a transparent interface.
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U2 - 10.23919/LTB-3D.2019.8735327
DO - 10.23919/LTB-3D.2019.8735327
M3 - Conference contribution
AN - SCOPUS:85068397952
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -