Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Shinji Matsuo; Koji Takeda; Tomonari Sato; Masaya Notomi; Akihiko Shinya; Kengo Nozaki; Hideaki Taniyama; Koichi Hasebe; Takaaki Kakitsuka

doi:10.1364/OE.20.003773

Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Shinji Matsuo^*, Koji Takeda, Tomonari Sato, Masaya Notomi, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Takaaki Kakitsuka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

136 Citations (Scopus)

Abstract

We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.

Original language	English
Pages (from-to)	3773-3780
Number of pages	8
Journal	Optics Express
Volume	20
Issue number	4
DOIs	https://doi.org/10.1364/OE.20.003773
Publication status	Published - 2012 Feb 13
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{508eafec774149e18ab9d33238fb8081,

title = "Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser",

abstract = "We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.",

author = "Shinji Matsuo and Koji Takeda and Tomonari Sato and Masaya Notomi and Akihiko Shinya and Kengo Nozaki and Hideaki Taniyama and Koichi Hasebe and Takaaki Kakitsuka",

year = "2012",

month = feb,

day = "13",

doi = "10.1364/OE.20.003773",

language = "English",

volume = "20",

pages = "3773--3780",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "4",

}

TY - JOUR

T1 - Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

AU - Matsuo, Shinji

AU - Takeda, Koji

AU - Sato, Tomonari

AU - Notomi, Masaya

AU - Shinya, Akihiko

AU - Nozaki, Kengo

AU - Taniyama, Hideaki

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

PY - 2012/2/13

Y1 - 2012/2/13

N2 - We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.

AB - We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.

UR - http://www.scopus.com/inward/record.url?scp=84863116165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863116165&partnerID=8YFLogxK

U2 - 10.1364/OE.20.003773

DO - 10.1364/OE.20.003773

M3 - Article

C2 - 22418134

AN - SCOPUS:84863116165

SN - 1094-4087

VL - 20

SP - 3773

EP - 3780

JO - Optics Express

JF - Optics Express

IS - 4

ER -

Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

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