Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range

Y. Matsushima; K. Utaka; K. Sakai; O. Takeuchi; O. Takeuchi

doi:10.1049/el:19870882

Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range

Y. Matsushima, K. Utaka, K. Sakai, O. Takeuchi, O. Takeuchi

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.

Original language	English
Pages (from-to)	1271-1273
Number of pages	3
Journal	Electronics Letters
Volume	23
Issue number	24
DOIs	https://doi.org/10.1049/el:19870882
Publication status	Published - 1987
Externally published	Yes

Keywords

Quantum optics
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19870882

Cite this

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title = "Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range",

abstract = "We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.",

keywords = "Quantum optics, Semiconductor lasers",

author = "Y. Matsushima and K. Utaka and K. Sakai and O. Takeuchi and O. Takeuchi",

year = "1987",

doi = "10.1049/el:19870882",

language = "English",

volume = "23",

pages = "1271--1273",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range

AU - Matsushima, Y.

AU - Utaka, K.

AU - Sakai, K.

AU - Takeuchi, O.

PY - 1987

Y1 - 1987

N2 - We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.

AB - We report the first successful room-temperature CW operation of GalnAs/AllnAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.

KW - Quantum optics

KW - Semiconductor lasers

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U2 - 10.1049/el:19870882

DO - 10.1049/el:19870882

M3 - Article

AN - SCOPUS:0023451563

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Room-Temperature CW Operation of Mbe-Grown Galnas/AllnAs Mow Lasers IN 1.5 μm Range

Abstract

Keywords

ASJC Scopus subject areas

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