Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters

Takao Aoki; Yukie Nishikawa; Makoto Kuwata-Gonokami

doi:10.1063/1.1346630

Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters

Takao Aoki, Yukie Nishikawa, Makoto Kuwata-Gonokami^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one in 100-1000) of the clusters shows random telegraph noise in luminescence at room temperature. Superlinear dependence of the luminescence switching rate on excitation intensity indicates that the switching is induced by the cooperation of multiple carriers.

Original language	English
Pages (from-to)	1065-1067
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.1346630
Publication status	Published - 2001 Feb 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1346630

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abstract = "We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one in 100-1000) of the clusters shows random telegraph noise in luminescence at room temperature. Superlinear dependence of the luminescence switching rate on excitation intensity indicates that the switching is induced by the cooperation of multiple carriers.",

author = "Takao Aoki and Yukie Nishikawa and Makoto Kuwata-Gonokami",

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AU - Aoki, Takao

AU - Nishikawa, Yukie

AU - Kuwata-Gonokami, Makoto

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Y1 - 2001/2/19

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AB - We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one in 100-1000) of the clusters shows random telegraph noise in luminescence at room temperature. Superlinear dependence of the luminescence switching rate on excitation intensity indicates that the switching is induced by the cooperation of multiple carriers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters

Abstract

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