TY - JOUR
T1 - Room temperature SiC-SiO2 wafer bonding enhanced by using an intermediate si nano layer
AU - Mu, Fengwen
AU - Iguchi, K.
AU - Nakazawa, H.
AU - Takahashi, Y.
AU - He, R.
AU - Fujino, M.
AU - Suga, T.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - In this work, compared with the direct wafer bonding by surface activated bonding (SAB) at room temperature, SiC-SiO2 wafer bonding was effectively enhanced by using a Si nano layer deposited on SiO2 such as improvement of fracture surface energy and reduction of bonding void. A uniform seamless bonding in bonded region was confirmed by interface analysis. The strong bonding confirmed the strong bonding of SiC-Si in previous research and also demonstrated a strong adhesion of Si nano layer deposited on SiO2 substrate, which is different from direct wafer bonding of Si-SiO2 by SAB. The possible mechanism of strong adhesion was investigated by molecular dynamic simulation.
AB - In this work, compared with the direct wafer bonding by surface activated bonding (SAB) at room temperature, SiC-SiO2 wafer bonding was effectively enhanced by using a Si nano layer deposited on SiO2 such as improvement of fracture surface energy and reduction of bonding void. A uniform seamless bonding in bonded region was confirmed by interface analysis. The strong bonding confirmed the strong bonding of SiC-Si in previous research and also demonstrated a strong adhesion of Si nano layer deposited on SiO2 substrate, which is different from direct wafer bonding of Si-SiO2 by SAB. The possible mechanism of strong adhesion was investigated by molecular dynamic simulation.
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U2 - 10.1149/2.0081705jss
DO - 10.1149/2.0081705jss
M3 - Article
AN - SCOPUS:85037814479
SN - 2162-8769
VL - 6
SP - P227-P230
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 5
ER -