Room temperature SiC wafer bonding using SAB methods

Fengwen Mu; Yinghui Wang; Kenichi Iguchi; Haruo Nakazawa; Tadatomo Suga

doi:10.23919/LTB-3D.2019.8735211

Room temperature SiC wafer bonding using SAB methods

Fengwen Mu, Yinghui Wang, Kenichi Iguchi, Haruo Nakazawa, Tadatomo Suga

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.

Original language	English
Title of host publication	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	1
ISBN (Electronic)	9784904743072
DOIs	https://doi.org/10.23919/LTB-3D.2019.8735211
Publication status	Published - 2019 May
Event	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan Duration: 2019 May 21 → 2019 May 25

Publication series

Name	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/Territory	Japan
City	Kanazawa, Ishikawa
Period	19/5/21 → 19/5/25

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.23919/LTB-3D.2019.8735211

Cite this

Mu, F., Wang, Y., Iguchi, K., Nakazawa, H., & Suga, T. (2019). Room temperature SiC wafer bonding using SAB methods. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 Article 8735211 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735211

Room temperature SiC wafer bonding using SAB methods. / Mu, Fengwen; Wang, Yinghui; Iguchi, Kenichi et al.
Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735211 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mu, F, Wang, Y, Iguchi, K, Nakazawa, H & Suga, T 2019, Room temperature SiC wafer bonding using SAB methods. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735211, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735211

Mu F, Wang Y, Iguchi K, Nakazawa H, Suga T. Room temperature SiC wafer bonding using SAB methods. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735211. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). doi: 10.23919/LTB-3D.2019.8735211

Mu, Fengwen ; Wang, Yinghui ; Iguchi, Kenichi et al. / Room temperature SiC wafer bonding using SAB methods. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

@inproceedings{5e907243463d4be1bbd881c8a538402d,

title = "Room temperature SiC wafer bonding using SAB methods",

abstract = "In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.",

author = "Fengwen Mu and Yinghui Wang and Kenichi Iguchi and Haruo Nakazawa and Tadatomo Suga",

year = "2019",

month = may,

doi = "10.23919/LTB-3D.2019.8735211",

language = "English",

series = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",

note = "6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 ; Conference date: 21-05-2019 Through 25-05-2019",

}

TY - GEN

T1 - Room temperature SiC wafer bonding using SAB methods

AU - Mu, Fengwen

AU - Wang, Yinghui

AU - Iguchi, Kenichi

AU - Nakazawa, Haruo

AU - Suga, Tadatomo

PY - 2019/5

Y1 - 2019/5

N2 - In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.

AB - In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.

UR - http://www.scopus.com/inward/record.url?scp=85068414589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068414589&partnerID=8YFLogxK

U2 - 10.23919/LTB-3D.2019.8735211

DO - 10.23919/LTB-3D.2019.8735211

M3 - Conference contribution

AN - SCOPUS:85068414589

T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Y2 - 21 May 2019 through 25 May 2019

ER -

Room temperature SiC wafer bonding using SAB methods

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