TY - GEN
T1 - Room temperature wafer bonding of wide bandgap semiconductors
AU - Mu, Fengwen
AU - Wang, Yinghui
AU - Suga, Tadatomo
PY - 2018/1/1
Y1 - 2018/1/1
N2 - In this work, wafer bonding of wide bandgap semiconductors of SiC and OaN were accomplished by different surface activated bonding (SAB) methods at room temperature. For SiC wafer bonding, room temperature SiC-SiC, SiC-Si and SiC-SiO 2 bonding by three kinds of SAB methods (standard SAB, Modified SAB with Si-containing Ar-beam, and Modified SAB with Si-sputtering layer) have been investigated and compared. For GaN wafer bonding, standard SAB was applied to the direct wafer bonding of GaN-Si at room temperature and modified SAB with Si-sputtering layer was employed for the bonding of GaN-diamond at room temperature. For both of the SiC bonding and GaN bonding, the bonding mechanisms were analyzed. The results of this research indicate SAB should be a promising method for the low temperature bonding of wide bandgap semiconductors.
AB - In this work, wafer bonding of wide bandgap semiconductors of SiC and OaN were accomplished by different surface activated bonding (SAB) methods at room temperature. For SiC wafer bonding, room temperature SiC-SiC, SiC-Si and SiC-SiO 2 bonding by three kinds of SAB methods (standard SAB, Modified SAB with Si-containing Ar-beam, and Modified SAB with Si-sputtering layer) have been investigated and compared. For GaN wafer bonding, standard SAB was applied to the direct wafer bonding of GaN-Si at room temperature and modified SAB with Si-sputtering layer was employed for the bonding of GaN-diamond at room temperature. For both of the SiC bonding and GaN bonding, the bonding mechanisms were analyzed. The results of this research indicate SAB should be a promising method for the low temperature bonding of wide bandgap semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=85058278040&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058278040&partnerID=8YFLogxK
U2 - 10.1149/08605.0003ecst
DO - 10.1149/08605.0003ecst
M3 - Conference contribution
AN - SCOPUS:85058278040
T3 - ECS Transactions
SP - 3
EP - 21
BT - ECS Transactions
A2 - Goorsky, M.
A2 - Hobart, K.D.
A2 - Fournel, F.
A2 - Knechtel, R.
A2 - Tan, C.S.
A2 - Baumgart, H.
A2 - Suga, T.
PB - Electrochemical Society Inc.
T2 - Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
Y2 - 30 September 2018 through 4 October 2018
ER -